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Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displaysopen access
- Authors
- Jin, Taewon; Kim, Sanghyeon; Han, Jae-Hoon; Ahn, Dae-Hwan; An, Seong Ui; Noh, Tae Hyeon; Sun, Xinkai; Kim, Cheol Jun; Park, Juhyuk; Kim, Younghyun
- Issue Date
- Feb-2023
- Publisher
- The Royal Society of Chemistry
- Citation
- Nanoscale Advances, v.5, no.5, pp 1 - 7
- Pages
- 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- Nanoscale Advances
- Volume
- 5
- Number
- 5
- Start Page
- 1
- End Page
- 7
- ISSN
- 2516-0230
- Abstract
- We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors (TFTs) by introducing a non-volatile programmable ferroelectric material, HfZrO2 (HZO) into the gate stack of the TFT. We fabricated an amorphous ITZO TFT, ferroelectric TFTs (FeTFTs), and micro-LEDs and verified the feasibility of our proposed current-driving active matrix circuit. Importantly, we successfully present the programmed multi-level lighting of the micro-LED, utilizing partial polarization switching in the a-ITZO FeTFT. We expect that this approach will be highly promising for the next-generation display technology, replacing complicated threshold voltage compensation circuits with a simple a-ITZO FeTFT.
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Related Researcher
- Kim, Young hyun
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)