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Advances in Atomic Layer Deposition of Metal Sulfides: From a Precursors Perspective

Authors
Zaidi, Syed Jazib AbbasBasit, Muhammad AbdulPark, Tae Joo
Issue Date
Aug-2022
Publisher
American Chemical Society
Citation
Chemistry of Materials, v.34, no.16, pp 7106 - 7138
Pages
33
Indexed
SCIE
SCOPUS
Journal Title
Chemistry of Materials
Volume
34
Number
16
Start Page
7106
End Page
7138
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/112670
DOI
10.1021/acs.chemmater.2c00954
ISSN
0897-4756
1520-5002
Abstract
Development at the nanoscale has established diverse and complex structures with the help of a growing selection of materials to choose from. Among the major developments that has led to these creations is the atomic layer deposition (ALD) technique that allows precise linear stepwise synthesis of various nanomaterials, which is the defining feature of ALD. Recent research activities have recorded an upsurge in the synthesis and applications of metal sulfides created via this technique. This rise in research on ALD of metal sulfides has established varying methods to deposit each metal sulfide, which necessitates a review that can analyze the major and minor advancements that have been made in the field. Hence, this comprehensive review encompasses the various ALD techniques with which metal sulfides have been synthesized, followed by a thorough account of reported chemistry and parameters by which various kinds of metal and sulfide precursors react, and finally the existing, emerging, and potential applications that incorporate metal sulfide ALD.
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Park, Tae Joo
ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)
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