Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Optimal thickness of phase shift mask considering phase and reflectance in high NA EUV contact-hole pattern
- Authors
- Park, Jang-Gun; Kim, Min-Woo; Kang, Ji-Won; Ko, Hee-Chang; Lee, Jun-Hyeong; Choi, Won-Young; Oh, Hye-Keun
- Issue Date
- May-2022
- Publisher
- SPIE-INT SOC OPTICAL ENGINEERING
- Keywords
- High NA EUV; mask 3D effect; stochastic noise; target CD; pitch ratio; high reflectance PSM; imaging performance; NILS
- Citation
- OPTICAL AND EUV NANOLITHOGRAPHY XXXV, v.12051, pp 1 - 7
- Pages
- 7
- Indexed
- SCIE
- Journal Title
- OPTICAL AND EUV NANOLITHOGRAPHY XXXV
- Volume
- 12051
- Start Page
- 1
- End Page
- 7
- ISSN
- 0277-786X
1996-756X
- Abstract
- For finer linewidth patterning, 0.55 numerical aperture (NA) should be used instead of the existing 0.33 NA. In 0.55 NA extreme ultraviolet lithography (EUVL), to alleviate the mask 3D effect and stochastic noise, which is stronger, it is necessary to develop an optimal phase shift mask (PSM) and multilayer mask for high NA. Mask structure is used PSM with composed of Ru-alloy/TaBO and multilayer composed of ruthenium (Ru)/silicon (Si), which is expected to be effective in mitigating mask 3D effect and improving imaging performance. The absorber reflectance was checked which is changed by variables such as pattern existence, target CD, and pitch ratio. In addition, by examining the relationship between the change in absorber reflectance and normalized image log slope (NILS), it was determined whether the mask structure for high NA was changed by the target pattern changes.
- Files in This Item
- Go to Link
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.