Area-Selective Atomic Layer Deposition of High-Quality Ru Thin Films by Chemo-Selective Adsorption of Short Alkylating Agents,
DC Field | Value | Language |
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dc.contributor.author | Lee, Jeong-Min | - |
dc.contributor.author | Lee, Seo-Hyun | - |
dc.contributor.author | Oh, Jieun | - |
dc.contributor.author | Kim, Woo-Hee | - |
dc.date.accessioned | 2023-07-05T06:30:26Z | - |
dc.date.available | 2023-07-05T06:30:26Z | - |
dc.date.issued | 2023-02 | - |
dc.identifier.issn | 0167-577X | - |
dc.identifier.issn | 1873-4979 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/113524 | - |
dc.description.abstract | We report the effects of surface modification by vapor dosing of (N,N-diethylamino)trimethylsilane (DEATMS) molecules as short alkylating agents on technologically important substrates of Si, SiO2, TiN, and W. In this study, tricarbonyl(trimethylenemethane) ruthenium [Ru(TMM)(CO)3] was employed as a metal–organic precursor for atomic layer deposition (ALD) of Ru, which produced high-quality Ru films with significantly low resistivity and high growth-per-cycle. Through surface modification of vapor-dosed DEATMS molecules, significant growth retardation against the ALD Ru process was selectively found on SiO2 and TiN in contrast to Si(-H) and W substrates. With applying chemo-selectively inhibitory characteristics, we successfully demonstrate area selective deposition of ALD Ru films on a patterned TiN/Si substrate. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Elsevier BV | - |
dc.title | Area-Selective Atomic Layer Deposition of High-Quality Ru Thin Films by Chemo-Selective Adsorption of Short Alkylating Agents, | - |
dc.type | Article | - |
dc.publisher.location | 네델란드 | - |
dc.identifier.doi | 10.1016/j.matlet.2022.133574 | - |
dc.identifier.scopusid | 2-s2.0-85143886636 | - |
dc.identifier.wosid | 000898672400007 | - |
dc.identifier.bibliographicCitation | Materials Letters, v.333, pp 1 - 4 | - |
dc.citation.title | Materials Letters | - |
dc.citation.volume | 333 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Aminosilane inhibitor | - |
dc.subject.keywordAuthor | Area-selective atomic layer deposition | - |
dc.subject.keywordAuthor | Growth retardation | - |
dc.subject.keywordAuthor | Ruthenium | - |
dc.subject.keywordAuthor | Surface modification | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0167577X22019292?pes=vor | - |
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