High-quality SiNx thin-film growth at 300 & DEG;C using atomic layer deposition with hollow-cathode plasma

Abstract

We report high-quality atomic-layer-deposited SiNx thin films using a novel remote plasma source, hollow cathode plasma (HCP), at a low temperature of 300 & DEG;C. SiNx films using the HCP source show superior properties to those deposited using inductively-coupled plasma (ICP), a conventional remote plasma source. X-Ray photoelectron spectroscopy and Auger electron spectroscopy analyses reveal that the SiNx film grown using the HCP source has a higher N/Si ratio, a lower oxygen impurity concentration, and outstanding oxidation resistance. The wet etch rate of HCP SiNx films is significantly improved compared with that of ICP SiNx films. In addition, the HCP SiNx films exhibit superb electrical properties, such as the dielectric constant, gate leakage current, and dielectric breakdown field.