Direct formation of graphene on dielectric substrate: Controlling the location of graphene formation adopting carbon diffusion barrier
- Authors
- Kim, Ki-Ju; Cho, Seong-Yong; Kim, Hyun-Mi; Kim, Ki-Bum
- Issue Date
- Mar-2018
- Publisher
- American Institute of Physics
- Citation
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v.36, no.2, pp 1 - 8
- Pages
- 8
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
- Volume
- 36
- Number
- 2
- Start Page
- 1
- End Page
- 8
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/113730
- DOI
- 10.1116/1.5016591
- ISSN
- 1071-1023
2166-2746
- Abstract
- The authors report a method to form multilayered graphene directly on top of a dielectric SiO2/Si substrate by the solid-phase crystallization of amorphous carbon (a-C) using Ni as a catalyst and Ti as a carbon diffusion barrier layer; the layer sequence is Ti/Ni/a-C/SiO2/Si. During annealing, carbon diffuses through Ni and forms TiC at the Ti/Ni interface, blocking further carbon diffusion to the Ti layer. During cooling, the remnant carbon in the Ni layer precipitates out at the Ni/SiO2 interface, forming multilayers of graphene. Then, both Ti and Ni are etched away using Radio Corporation of America standard cleaning (SC-I) and FeCl3-based wet etching. The graphene layers formed on top of the dielectric substrate can be utilized without further transfer methods. The best-quality of graphene is formed at 600 °C with the Raman signal D- to G-peak intensity ratio of 0.29. Auger electron spectroscopy depth profiles and sequential etching tests with SC-I and FeCl3-based etchant confirms that the Ti layer is transformed to TiOxCy or TiC layer, which may reduce the carbon diffusion flux through this layer, as expected. © 2018 Author(s).
- Files in This Item
-
Go to Link
- Appears in
Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.