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Direct formation of graphene on dielectric substrate: Controlling the location of graphene formation adopting carbon diffusion barrier

Authors
Kim, Ki-JuCho, Seong-YongKim, Hyun-MiKim, Ki-Bum
Issue Date
Mar-2018
Publisher
American Institute of Physics
Citation
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v.36, no.2, pp 1 - 8
Pages
8
Indexed
SCI
SCIE
SCOPUS
Journal Title
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume
36
Number
2
Start Page
1
End Page
8
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/113730
DOI
10.1116/1.5016591
ISSN
1071-1023
2166-2746
Abstract
The authors report a method to form multilayered graphene directly on top of a dielectric SiO2/Si substrate by the solid-phase crystallization of amorphous carbon (a-C) using Ni as a catalyst and Ti as a carbon diffusion barrier layer; the layer sequence is Ti/Ni/a-C/SiO2/Si. During annealing, carbon diffuses through Ni and forms TiC at the Ti/Ni interface, blocking further carbon diffusion to the Ti layer. During cooling, the remnant carbon in the Ni layer precipitates out at the Ni/SiO2 interface, forming multilayers of graphene. Then, both Ti and Ni are etched away using Radio Corporation of America standard cleaning (SC-I) and FeCl3-based wet etching. The graphene layers formed on top of the dielectric substrate can be utilized without further transfer methods. The best-quality of graphene is formed at 600 °C with the Raman signal D- to G-peak intensity ratio of 0.29. Auger electron spectroscopy depth profiles and sequential etching tests with SC-I and FeCl3-based etchant confirms that the Ti layer is transformed to TiOxCy or TiC layer, which may reduce the carbon diffusion flux through this layer, as expected. © 2018 Author(s).
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)
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