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All-Silicon Photodetectors for Photonic Integrated Circuit Calibration

Authors
Dwivedi, SarvagyaKjellman, JonProst, MathiasSyshchyk, OlgaVan Sieleghem, EdwardLee, JiwonMarinins, AleksSoussan, PhilippeDahlem, MarcusRottenberg, XavierJansen, Roelof
Issue Date
Aug-2021
Publisher
Institute of Electrical and Electronics Engineers
Keywords
integrated photodetectors; phase errors; photon-assisted tunneling; photonic circuit calibration; Photonic integrated circuits
Citation
IEEE Photonics Technology Letters, v.33, no.16, pp 836 - 839
Pages
4
Indexed
SCIE
SCOPUS
Journal Title
IEEE Photonics Technology Letters
Volume
33
Number
16
Start Page
836
End Page
839
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/113780
DOI
10.1109/LPT.2021.3065222
ISSN
1041-1135
1941-0174
Abstract
All-silicon highly-doped PN junction-based photodetectors, for photonic integrated circuit (PIC) calibration and power monitoring, are designed and fabricated in the C-band. The photodetector response is measured for different doping conditions. The photodetectors are integrated with an interferometric based phase-interrogator structure for a test calibration circuit. The measured devices show high responsivity (12 A/W) obtained under avalanche condition at 5.7 V reverse bias and reasonable dark current (1 μA) due to photon assisted tunneling effect and are therefore, proved to be an ideal candidate for power monitoring and phase calibration of PICs. © 1989-2012 IEEE.
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