All-Silicon Photodetectors for Photonic Integrated Circuit Calibration
- Authors
- Dwivedi, Sarvagya; Kjellman, Jon; Prost, Mathias; Syshchyk, Olga; Van Sieleghem, Edward; Lee, Jiwon; Marinins, Aleks; Soussan, Philippe; Dahlem, Marcus; Rottenberg, Xavier; Jansen, Roelof
- Issue Date
- Aug-2021
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- integrated photodetectors; phase errors; photon-assisted tunneling; photonic circuit calibration; Photonic integrated circuits
- Citation
- IEEE Photonics Technology Letters, v.33, no.16, pp 836 - 839
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Photonics Technology Letters
- Volume
- 33
- Number
- 16
- Start Page
- 836
- End Page
- 839
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/113780
- DOI
- 10.1109/LPT.2021.3065222
- ISSN
- 1041-1135
1941-0174
- Abstract
- All-silicon highly-doped PN junction-based photodetectors, for photonic integrated circuit (PIC) calibration and power monitoring, are designed and fabricated in the C-band. The photodetector response is measured for different doping conditions. The photodetectors are integrated with an interferometric based phase-interrogator structure for a test calibration circuit. The measured devices show high responsivity (12 A/W) obtained under avalanche condition at 5.7 V reverse bias and reasonable dark current (1 μA) due to photon assisted tunneling effect and are therefore, proved to be an ideal candidate for power monitoring and phase calibration of PICs. © 1989-2012 IEEE.
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