Area-Selective Atomic Layer Deposition of Ruthenium Thin Films Using Aldehyde Inhibitors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Haneul | - |
dc.contributor.author | Oh, Jieun | - |
dc.contributor.author | Lee, Jeong-Min | - |
dc.contributor.author | Kim, Woo-Hee | - |
dc.date.accessioned | 2023-08-16T07:46:41Z | - |
dc.date.available | 2023-08-16T07:46:41Z | - |
dc.date.issued | 2023-05 | - |
dc.identifier.issn | 2380-632X | - |
dc.identifier.issn | 2380-6338 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/114239 | - |
dc.description.abstract | Recently, area selective atomic layer deposition (AS-ALD) has attached attention for alternative approach of device downscaling in 3D semiconductor fabrication. We reported Ru AS-ALD through vapor-phase adsorption of aldehyde self-assembled monolayers (SAMs). In this study, we investigate Ru ALD process and explored inhibitory efficacy of aldehyde inhibitors on various substrates, including nitride, oxide, and metal surfaces. As a results of chemo-selective adsorption of aldehyde molecules, nitride substrates were selectively passivated, thereby leading to growth retardation of Ru ALD. Finally, through surface functionalization by using aldehyde inhibitors, we achieved Ru AS-ALD on patterned TiN/SiO2 surfaces. © 2023 IEEE. | - |
dc.format.extent | 3 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Area-Selective Atomic Layer Deposition of Ruthenium Thin Films Using Aldehyde Inhibitors | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/IITC/MAM57687.2023.10154817 | - |
dc.identifier.scopusid | 2-s2.0-85164156929 | - |
dc.identifier.wosid | 001027381700038 | - |
dc.identifier.bibliographicCitation | 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings, pp 1 - 3 | - |
dc.citation.title | 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 3 | - |
dc.type.docType | Proceedings Paper | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Computer Science | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Computer Science, Interdisciplinary Applications | - |
dc.relation.journalWebOfScienceCategory | Computer Science, Theory & Methods | - |
dc.relation.journalWebOfScienceCategory | Engineering, Mechanical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordAuthor | aldehyde inhibitor | - |
dc.subject.keywordAuthor | area-selective atomic layer deposition | - |
dc.subject.keywordAuthor | Ru ALD | - |
dc.subject.keywordAuthor | self-assembled monolayer | - |
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