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Effects of fabrication conditions and post-annealing on the characteristics of thin film transistors with Zr-Al-Zn_O channel layers

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dc.contributor.author박진석-
dc.date.accessioned2021-06-22T15:10:04Z-
dc.date.available2021-06-22T15:10:04Z-
dc.date.issued2016-10-01-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11452-
dc.titleEffects of fabrication conditions and post-annealing on the characteristics of thin film transistors with Zr-Al-Zn_O channel layers-
dc.typeConference-
dc.citation.conferenceName6th IS-TCMs-
dc.citation.conferencePlaceCrete, Greece-
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PARK, JIN SEOK
ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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