All-Room-Temperature Processed 17.25%-Crystalline Silicon Solar Cell
- Authors
- Kim, Sung-Hae; Jung, Jin-Young; Wehrspohn, Ralf B.; Lee, Jung-Ho
- Issue Date
- Apr-2020
- Publisher
- AMER CHEMICAL SOC
- Keywords
- room temperature; Si solar cells; vanadium oxide; barium oxide; contact resistivity
- Citation
- ACS Applied Energy Materials, v.3, no.4, pp.3180 - 3185
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS Applied Energy Materials
- Volume
- 3
- Number
- 4
- Start Page
- 3180
- End Page
- 3185
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/1147
- DOI
- 10.1021/acsaem.0c00133
- ISSN
- 2574-0962
- Abstract
- In creating the next generation of crystalline silicon (c-Si) solar cells, the goals are to improve energy conversion efficiency and reduce costs. Here, we demonstrate all-room-temperature-processed high-efficiency thin-film/c-Si heterojunction solar cells. Functional thin-film multilayers of ITO/Ni/vanadium oxide (VOx) and barium oxide (BaOx)/Al are stacked on the front and rear sides, respectively. The comprehensive analysis revealed Ni and BaOx interlayers facilitated the selective collection of charge carriers. With the MgF2 antireflection layer, the efficiency of 17.25% was achieved, suggesting a strategy for the room-temperature fabrication of high-efficiency c-Si solar cells.
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