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Tuning the Work Function of Printed Polymer Electrodes by Introducing a Fluorinated Polymer to Enhance the Operational Stability in Bottom-Contact Organic Field-Effect Transistors

Authors
Kim, Se hyunKim, JiyeNam, SoojiLee, Hwa SungLee, Seung WooJang, Jaeyoung
Issue Date
Mar-2017
Publisher
American Chemical Society
Keywords
bottom-contact electrodes; electrohydrodynamic printing; Nafion; organic field-effect transistors (OFETs); poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS); work function tuning
Citation
ACS Applied Materials and Interfaces, v.9, no.14, pp 12637 - 12646
Pages
10
Indexed
SCI
SCIE
SCOPUS
Journal Title
ACS Applied Materials and Interfaces
Volume
9
Number
14
Start Page
12637
End Page
12646
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11567
DOI
10.1021/acsami.6b16259
ISSN
1944-8244
1944-8252
Abstract
Poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) is a promising electrode material for organic electronic devices due to its high conductivity, good mechanical flexibility, and feasibility of easy patterning with various printing methods. The work function of PEDOT:PSS needs to be increased for efficient hole injection, and the addition of a fluorine-containing material has been reported to increase the work function of PEDOT:PSS. However, it remains a challenge to print PEDOT:PSS electrodes while simultaneously tuning their work functions. Here, we report work function tunable PEDOT:PSS/Nafion source/drain electrodes formed by electrohydrodynamic printing technique with PEDOT:PSS/Nafion mixture solutions for highly stable bottom-contact organic field-effect transistors (OFETs). The surface properties and work function of the printed electrode can be controlled by varying the Nafion ratio, due to the vertical phase separation of the PEDOT:PSS/Nafion. The PEDOT:PSS/Nafion electrodes exhibit a low hole injection barrier, which leads to efficient charge carrier injection from the electrode to the semiconductor. As a result, pentacene-based OFETs with PEDOT:PSS/Nafion electrodes show increased charge carrier mobilities of 0.39 cm2/(V·s) compared to those of devices with neat PEDOT:PSS electrodes (0.021 cm2/(V·s)). Moreover, the gate-bias stress stability of the OFETs is remarkably improved by employing PEDOT:PSS/Nafion electrodes, as demonstrated by a reduction of the threshold voltage shift from -1.84 V to -0.28 V. © 2017 American Chemical Society.
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ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)
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