Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition
DC Field | Value | Language |
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dc.contributor.author | Lee, Seung Hwan | - |
dc.contributor.author | Kwon, Jung Dae | - |
dc.contributor.author | Ahn, Ji-Hoon | - |
dc.contributor.author | Park, Jin Seong | - |
dc.date.accessioned | 2021-06-22T15:22:15Z | - |
dc.date.available | 2021-06-22T15:22:15Z | - |
dc.date.created | 2021-01-22 | - |
dc.date.issued | 2017-06 | - |
dc.identifier.issn | 0272-8842 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11569 | - |
dc.description.abstract | Composition-modulated niobium oxide thin films were deposited by plasma-enhanced atomic layer deposition using NbF5, hydrogen plasma and ozone as the precursor, a reducing agent and an oxidant, respectively. For composition control of the niobium oxide thin films, a super-cycle was adopted, which was composed of n cycles of the metal deposition step and one cycle of the oxidation step. NbO2 and Nb2O5 phase components coexisted in the NbOx thin films, and the phase composition ratio of Nb2O5 and NbO2 could be modulated from approximately 80:20 to 40:60 through control of the cycle ratio. Furthermore, the optical bandgap and electrical resistivity decreased from 3.91eV to 2.19 eV and from 6.5×104 Ω cm to 3.1×10−1 Ω cm with increasing the cycle count for the Nb metal deposition step, respectively. Consequently, we could effectively modulate the electrical properties of NbOx thin films via compositional modulation. © 2017 Elsevier Ltd and Techna Group S.r.l. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Pergamon Press Ltd. | - |
dc.title | Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Ji-Hoon | - |
dc.identifier.doi | 10.1016/j.ceramint.2017.02.089 | - |
dc.identifier.scopusid | 2-s2.0-85013411149 | - |
dc.identifier.wosid | 000401401500101 | - |
dc.identifier.bibliographicCitation | Ceramics International, v.43, no.8, pp.6580 - 6584 | - |
dc.relation.isPartOf | Ceramics International | - |
dc.citation.title | Ceramics International | - |
dc.citation.volume | 43 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 6580 | - |
dc.citation.endPage | 6584 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.subject.keywordPlus | Atomic layer deposition | - |
dc.subject.keywordPlus | Atoms | - |
dc.subject.keywordPlus | Deposition | - |
dc.subject.keywordPlus | Modulation | - |
dc.subject.keywordPlus | Niobium | - |
dc.subject.keywordPlus | Oxide films | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | Composition control | - |
dc.subject.keywordPlus | Compositional modulation | - |
dc.subject.keywordPlus | D: electrical properties | - |
dc.subject.keywordPlus | Electrical modulation | - |
dc.subject.keywordPlus | Hydrogen plasmas | - |
dc.subject.keywordPlus | Metal deposition | - |
dc.subject.keywordPlus | Oxide thin films | - |
dc.subject.keywordPlus | Plasma-enhanced atomic layer deposition | - |
dc.subject.keywordPlus | Niobium oxide | - |
dc.subject.keywordAuthor | A: Plasma-enhanced atomic layer deposition | - |
dc.subject.keywordAuthor | B: Niobium oxide | - |
dc.subject.keywordAuthor | C: Thin films | - |
dc.subject.keywordAuthor | D: Electrical property | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0272884217302808?via%3Dihub | - |
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