Photo-thermoelectric properties of SnS nanocrystals with orthorhombic layered structure
DC Field | Value | Language |
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dc.contributor.author | Hyun, Cheol Min | - |
dc.contributor.author | Choi, Jeong Hun | - |
dc.contributor.author | Lee, Myoung Jae | - |
dc.contributor.author | Ahn, Ji-Hoon | - |
dc.date.accessioned | 2021-06-22T15:22:22Z | - |
dc.date.available | 2021-06-22T15:22:22Z | - |
dc.date.created | 2021-01-22 | - |
dc.date.issued | 2017 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11575 | - |
dc.description.abstract | The photo-thermoelectric properties of SnS nanocrystals, two-dimensional materials with an orthorhombic symmetry, were investigated using a focused laser scanning method. The SnS nanocrystals were synthesized by a vapor transport method, and their fundamental material and electrical properties were investigated. Upon shining a laser onto the SnS channel region under a positive source-drain bias, a positive photocurrent was observed due to photo-excited electron-hole pairs. On the other hand, when this external electric field was not applied, a strong photocurrent was observed within the metal electrode region rather than at the metal-semiconductor interface, which indicated that the major mechanism for the photocurrent under zero external bias was a photo-induced thermoelectric effect rather than a photovoltaic effect. Moreover, the Seebeck coefficient of the SnS nanocrystal device was approximately 1735 μV/K, which is 3.5 times larger than that of its bulk counterpart. © 2017 Author(s). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | American Institute of Physics | - |
dc.title | Photo-thermoelectric properties of SnS nanocrystals with orthorhombic layered structure | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Ji-Hoon | - |
dc.identifier.doi | 10.1063/1.4992115 | - |
dc.identifier.scopusid | 2-s2.0-85022196813 | - |
dc.identifier.wosid | 000405083600032 | - |
dc.identifier.bibliographicCitation | Applied Physics Letters, v.111, no.1, pp.1 - 5 | - |
dc.relation.isPartOf | Applied Physics Letters | - |
dc.citation.title | Applied Physics Letters | - |
dc.citation.volume | 111 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | Electric fields | - |
dc.subject.keywordPlus | Layered semiconductors | - |
dc.subject.keywordPlus | Nanocrystals | - |
dc.subject.keywordPlus | Photocurrents | - |
dc.subject.keywordPlus | Photovoltaic effects | - |
dc.subject.keywordPlus | Semiconductor lasers | - |
dc.subject.keywordPlus | Thermoelectric equipment | - |
dc.subject.keywordPlus | External electric field | - |
dc.subject.keywordPlus | Layered Structures | - |
dc.subject.keywordPlus | Metal semiconductor interface | - |
dc.subject.keywordPlus | Orthorhombic symmetry | - |
dc.subject.keywordPlus | Photo-thermoelectric | - |
dc.subject.keywordPlus | Photoexcited electrons | - |
dc.subject.keywordPlus | Two-dimensional materials | - |
dc.subject.keywordPlus | Vapor transport methods | - |
dc.subject.keywordPlus | Thermoelectricity | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.4992115 | - |
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