Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Photo-thermoelectric properties of SnS nanocrystals with orthorhombic layered structure

Full metadata record
DC Field Value Language
dc.contributor.authorHyun, Cheol Min-
dc.contributor.authorChoi, Jeong Hun-
dc.contributor.authorLee, Myoung Jae-
dc.contributor.authorAhn, Ji-Hoon-
dc.date.accessioned2021-06-22T15:22:22Z-
dc.date.available2021-06-22T15:22:22Z-
dc.date.created2021-01-22-
dc.date.issued2017-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11575-
dc.description.abstractThe photo-thermoelectric properties of SnS nanocrystals, two-dimensional materials with an orthorhombic symmetry, were investigated using a focused laser scanning method. The SnS nanocrystals were synthesized by a vapor transport method, and their fundamental material and electrical properties were investigated. Upon shining a laser onto the SnS channel region under a positive source-drain bias, a positive photocurrent was observed due to photo-excited electron-hole pairs. On the other hand, when this external electric field was not applied, a strong photocurrent was observed within the metal electrode region rather than at the metal-semiconductor interface, which indicated that the major mechanism for the photocurrent under zero external bias was a photo-induced thermoelectric effect rather than a photovoltaic effect. Moreover, the Seebeck coefficient of the SnS nanocrystal device was approximately 1735 μV/K, which is 3.5 times larger than that of its bulk counterpart. © 2017 Author(s).-
dc.language영어-
dc.language.isoen-
dc.publisherAmerican Institute of Physics-
dc.titlePhoto-thermoelectric properties of SnS nanocrystals with orthorhombic layered structure-
dc.typeArticle-
dc.contributor.affiliatedAuthorAhn, Ji-Hoon-
dc.identifier.doi10.1063/1.4992115-
dc.identifier.scopusid2-s2.0-85022196813-
dc.identifier.wosid000405083600032-
dc.identifier.bibliographicCitationApplied Physics Letters, v.111, no.1, pp.1 - 5-
dc.relation.isPartOfApplied Physics Letters-
dc.citation.titleApplied Physics Letters-
dc.citation.volume111-
dc.citation.number1-
dc.citation.startPage1-
dc.citation.endPage5-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusElectric fields-
dc.subject.keywordPlusLayered semiconductors-
dc.subject.keywordPlusNanocrystals-
dc.subject.keywordPlusPhotocurrents-
dc.subject.keywordPlusPhotovoltaic effects-
dc.subject.keywordPlusSemiconductor lasers-
dc.subject.keywordPlusThermoelectric equipment-
dc.subject.keywordPlusExternal electric field-
dc.subject.keywordPlusLayered Structures-
dc.subject.keywordPlusMetal semiconductor interface-
dc.subject.keywordPlusOrthorhombic symmetry-
dc.subject.keywordPlusPhoto-thermoelectric-
dc.subject.keywordPlusPhotoexcited electrons-
dc.subject.keywordPlusTwo-dimensional materials-
dc.subject.keywordPlusVapor transport methods-
dc.subject.keywordPlusThermoelectricity-
dc.identifier.urlhttps://aip.scitation.org/doi/10.1063/1.4992115-
Files in This Item
Go to Link
Appears in
Collections
COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Ahn, Ji Hoon photo

Ahn, Ji Hoon
ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)
Read more

Altmetrics

Total Views & Downloads

BROWSE