A 6-18 GHz GaN distributed power amplifier using reactive matching technique and simplified bias network
- Authors
- Park, Hongjong; Lee, Sangho; Choi, Kwangseok; Kim, Jihoon; Nam, Hyosung; Kim, Jaeduk; Lee, Wangyong; Lee, Changhoon; Kim, Junghyun; Kwon, Youngwoo
- Issue Date
- Jun-2017
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- broadband amplifier; distributed amplifier (DA); GaN MMIC; multi-octave; power amplifier (PA)
- Citation
- Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, pp.394 - 397
- Indexed
- SCIE
SCOPUS
- Journal Title
- Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
- Start Page
- 394
- End Page
- 397
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11576
- DOI
- 10.1109/RFIC.2017.7969101
- ISSN
- 1529-2517
- Abstract
- Two-stage reactively matched gain cells are applied to design a high-gain multi-octave distributed power amplifier (DPA) in this paper. The proposed reactively matched distributed amplifier (RMDA) structure shows a high gain and high output power performance within a small die size. The DC bias network of each section is simplified to implement the proposed structure in an MMIC and the design guide for the bias network is provided. A 6-18 GHz GaN DPA fabricated with the commercial 0.25-μm GaN HEMT process shows output power reaching 40.3-43.9 dBm with 16-27% PAE. To the best of our knowledge, this is the first demonstration of a GaN DPA using reactively matched gain cells, and it exhibits excellent small-signal gain and RF power performance capabilities among other reported GaN PAs with a multi-octave bandwidth up to the Ku-band. © 2017 IEEE.
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