Implementation of rutile-TiO2 thin films on TiN without post-annealing through introduction of SnO2 and its improved electrical properties
DC Field | Value | Language |
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dc.contributor.author | Jeong, Min Ji | - |
dc.contributor.author | Lee, Seung Won | - |
dc.contributor.author | Shin, Yoonchul | - |
dc.contributor.author | Choi, Jeong-Hun | - |
dc.contributor.author | Ahn, Ji-Hoon | - |
dc.date.accessioned | 2023-11-24T02:39:54Z | - |
dc.date.available | 2023-11-24T02:39:54Z | - |
dc.date.issued | 2023-11 | - |
dc.identifier.issn | 2468-0230 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/115788 | - |
dc.description.abstract | Rutile-TiO2 has been actively studied as a high-k candidate for next-generation dynamic random-access memory (DRAM) capacitors due to its higher dielectric constant compared to commercially used ZrO2 and HfO2 based dielectrics. However, because the thermodynamic stabilization temperature of rutile-TiO2 is above 750 °C, which is not acceptable for the DRAM process, noble metal-based functional electrodes, such as RuO2 have been indispensably used for the formation of rutile-TiO2 thin films. The proposed method suggests the strategic introduction of Sn to reliably achieve mass production of rutile-TiO2 thin film on TiN electrodes. However, the atomic layer deposition (ALD) process with a commercially employed Sn precursor had issues such as requiring additional thermal process for crystallization due to low process temperature or generating a reducing by-product. Therefore, in this study, we realized rutile-TiO2 thin films on TiN electrodes without an additional post-thermal process using a new Sn precursor capable of high-temperature deposition. By employing an optimized Sn-doped TiO2 on seed layer, it was possible to implement a high dielectric constant of over 100, and the leakage current improvement effect was also confirmed. Therefore, the process presented in this study suggests a direction for future high-k research on next-generation DRAM capacitors. © 2023 Elsevier B.V. | - |
dc.format.extent | 7 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Elsevier | - |
dc.title | Implementation of rutile-TiO2 thin films on TiN without post-annealing through introduction of SnO2 and its improved electrical properties | - |
dc.type | Article | - |
dc.publisher.location | 네델란드 | - |
dc.identifier.doi | 10.1016/j.surfin.2023.103420 | - |
dc.identifier.scopusid | 2-s2.0-85172240781 | - |
dc.identifier.wosid | 001085832900001 | - |
dc.identifier.bibliographicCitation | Surfaces and Interfaces, v.42, pp 1 - 7 | - |
dc.citation.title | Surfaces and Interfaces | - |
dc.citation.volume | 42 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 7 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Capacitors | - |
dc.subject.keywordAuthor | Dielectric properties | - |
dc.subject.keywordAuthor | TiO<sub>2</sub> | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S2468023023007903?pes=vor | - |
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