Wafer-Scale Synthesis of Reliable High-Mobility Molybdenum Disulfide Thin Films via Inhibitor-Utilizing Atomic Layer Deposition
DC Field | Value | Language |
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dc.contributor.author | Jeon, Woojin | - |
dc.contributor.author | Cho, Yeonchoo | - |
dc.contributor.author | Jo, Sanghyun | - |
dc.contributor.author | Ahn, Ji-Hoon | - |
dc.contributor.author | Jeong, Seong Jun | - |
dc.date.accessioned | 2021-06-22T15:23:01Z | - |
dc.date.available | 2021-06-22T15:23:01Z | - |
dc.date.created | 2021-01-22 | - |
dc.date.issued | 2017-11 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11605 | - |
dc.description.abstract | A reliable and rapid manufacturing process of molybdenum disulfide (MoS2) with atomic-scale thicknesses remains a fundamental challenge toward its successful incorporation into high-performance nanoelectronics. It is imperative to achieve rapid and scalable production of MoS2 exhibiting high carrier mobility and excellent on/off current ratios simultaneously. Herein, inhibitor-utilizing atomic layer deposition (iALD) is presented as a novel method to meet these requirements at the wafer scale. The kinetics of the chemisorption of Mo precursors in iALD is governed by the reaction energy and the steric hindrance of inhibitor molecules. By optimizing the inhibition of Mo precursor absorption, the nucleation on the substrate in the initial stage can be spontaneously tailored to produce iALD-MoS2 thin films with a significantly increased grain size and surface coverage (>620%). Moreover, highly crystalline iALD-MoS2 thin films, with thicknesses of only a few layers, excellent room temperature mobility (13.9 cm2 V−1 s−1), and on/off ratios (>108), employed as the channel material in field effect transistors on 6″ wafers, are successfully prepared. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.title | Wafer-Scale Synthesis of Reliable High-Mobility Molybdenum Disulfide Thin Films via Inhibitor-Utilizing Atomic Layer Deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Ji-Hoon | - |
dc.identifier.doi | 10.1002/adma.201703031 | - |
dc.identifier.scopusid | 2-s2.0-85037980852 | - |
dc.identifier.wosid | 000418068700005 | - |
dc.identifier.bibliographicCitation | Advanced Materials, v.29, no.47, pp.1 - 8 | - |
dc.relation.isPartOf | Advanced Materials | - |
dc.citation.title | Advanced Materials | - |
dc.citation.volume | 29 | - |
dc.citation.number | 47 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, MultidisciplinaryPhysics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | Atomic layer deposition | - |
dc.subject.keywordPlus | Atoms | - |
dc.subject.keywordPlus | Chemisorption | - |
dc.subject.keywordPlus | Deposition | - |
dc.subject.keywordPlus | Growth kinetics | - |
dc.subject.keywordPlus | Molybdenum | - |
dc.subject.keywordPlus | Molybdenum compounds | - |
dc.subject.keywordPlus | Reaction kinetics | - |
dc.subject.keywordPlus | Sulfur compounds | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | Growth mechanisms | - |
dc.subject.keywordPlus | High carrier mobility | - |
dc.subject.keywordPlus | Inhibitor molecules | - |
dc.subject.keywordPlus | Molybdenum disulfide | - |
dc.subject.keywordPlus | ON/OFF current ratio | - |
dc.subject.keywordPlus | Rapid manufacturing | - |
dc.subject.keywordPlus | Room temperature mobility | - |
dc.subject.keywordPlus | Scalable production | - |
dc.subject.keywordPlus | Field effect transistors | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | field effect transistors | - |
dc.subject.keywordAuthor | molybdenum disulfide | - |
dc.subject.keywordAuthor | MoS2 growth mechanisms | - |
dc.subject.keywordAuthor | precursor chemisorption kinetics | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/adma.201703031 | - |
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