Modification of DHF for removal of metals from silicon wafer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Dong Hwan | - |
dc.contributor.author | Song, Hee jin | - |
dc.contributor.author | Jang, Sung hae | - |
dc.contributor.author | Kim, Hyun tae | - |
dc.contributor.author | Yi, Jae Hwan | - |
dc.contributor.author | Choi, Eunsuck | - |
dc.contributor.author | Park, Jin-Goo | - |
dc.date.accessioned | 2021-06-22T15:23:43Z | - |
dc.date.available | 2021-06-22T15:23:43Z | - |
dc.date.created | 2021-01-22 | - |
dc.date.issued | 2017 | - |
dc.identifier.issn | 1938-5862 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11638 | - |
dc.description.abstract | In this study, we modified DHF (Dilute Hydrofluoric acid) cleaning solution using various additives such as ozone and chelating agents to control metallic contaminants on silicon (Si) surface. Metal contaminations, Cu and Al, were intentionally deposited on Si surface by a dipping method to evaluate the effect of additives on metal removal. MRE (Metal Removal Efficiency) was measured by atomic force microscopy. By optimizing the concentration of additives in DHF, more than 95% of MRE was achieved. Cu was not easy to remove when compared with Al in chelating agent added DHF solutions. However, DHF with ozone showed higher and equal removal efficiency in both Cu and Al contaminants. © The Electrochemical Society. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Electrochemical Society, Inc. | - |
dc.title | Modification of DHF for removal of metals from silicon wafer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Goo | - |
dc.identifier.doi | 10.1149/08002.0249ecst | - |
dc.identifier.scopusid | 2-s2.0-85050012895 | - |
dc.identifier.wosid | 000578549400026 | - |
dc.identifier.bibliographicCitation | ECS Transactions, v.80, no.2, pp.249 - 256 | - |
dc.relation.isPartOf | ECS Transactions | - |
dc.citation.title | ECS Transactions | - |
dc.citation.volume | 80 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 249 | - |
dc.citation.endPage | 256 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | Atomic force microscopy | - |
dc.subject.keywordPlus | Chelation | - |
dc.subject.keywordPlus | Efficiency | - |
dc.subject.keywordPlus | Hydrofluoric acid | - |
dc.subject.keywordPlus | Metals | - |
dc.subject.keywordPlus | Ozone | - |
dc.subject.keywordPlus | Chelating agent | - |
dc.subject.keywordPlus | Cleaning solution | - |
dc.subject.keywordPlus | Dipping method | - |
dc.subject.keywordPlus | Metal contamination | - |
dc.subject.keywordPlus | Metal removal | - |
dc.subject.keywordPlus | Metallic contaminants | - |
dc.subject.keywordPlus | Removal efficiencies | - |
dc.subject.keywordPlus | Removal of metals | - |
dc.subject.keywordPlus | Silicon wafers | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/08002.0249ecst | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.