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A novel cost-effective two-level inverter with combined use of thyristors and IGBTs

Authors
Chen, DezhiBai, BaodongKwon, Byung ilFang, LiweiJiang, ZhilongZhao, Wenliang
Issue Date
Jun-2017
Publisher
Institute of Electrical and Electronics Engineers Inc.
Keywords
Diode; IGBT; simulation and experiment; thyristor; two-level inverter
Citation
2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017, pp.1902 - 1906
Indexed
SCOPUS
Journal Title
2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017
Start Page
1902
End Page
1906
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11670
DOI
10.1109/IFEEC.2017.7992340
ISSN
0000-0000
Abstract
In this paper, a novel topology of two-level voltage-type inverter is proposed. The proposed inverter has three bridge arms while each bridge is made up of 2 thyristors, 1 IGBT and 4 diodes. Thyristors complete the phase positioning of the inverter, IGBT completes the modulation of different modulation modes such as SPWM, SVPWM, and SHPWM, and the diodes complete the commutation of the bridge arms. Compared to the traditional voltage-type inverter with 6 IGBTs, the proposed voltage-type inverter using 3 IGBTs can achieve the same function with highly reduced cost. The principle of the proposed two-level inverter is explained in detail. The simulation and experiment results demonstrate the performance and effectiveness of the proposed inverter-type inverter. © 2017 IEEE.
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COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 1. Journal Articles

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