Ultralow temperature solution processed gate dielectrics using molecular structured precursors and highly energetic photochemical process
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jo, Jeong-Wan | - |
dc.contributor.author | Kim, Myung-Gil | - |
dc.contributor.author | Park, Joohyung | - |
dc.contributor.author | Heo, Jae Sang | - |
dc.contributor.author | Kang, Jin-Gu | - |
dc.contributor.author | Ban, Seok-Gyu | - |
dc.contributor.author | Kim, Yong-Hoon | - |
dc.contributor.author | Hwang, Seongpil | - |
dc.contributor.author | Kim, Jaekyun | - |
dc.contributor.author | Park, Sung Kyu | - |
dc.date.accessioned | 2021-06-22T15:24:30Z | - |
dc.date.available | 2021-06-22T15:24:30Z | - |
dc.date.created | 2021-01-22 | - |
dc.date.issued | 2017-07 | - |
dc.identifier.issn | 0000-0000 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11678 | - |
dc.description.abstract | We report a new strategy for obtaining an ultralow temperature solution derived metal-oxide dielectric such alumina, by using molecular clusters (MCs) (aluminium-oxo-hydroxy cluster, Al-13) as a precursor and local structure controllable activation process via deep-ultraviolet (DUV)-induced photochemical activation. We show that the combination of Al-13 MC precursor and the spatially controllable photochemical activation enables the formation of highly dense oxide (Al2O3) thin films at an ultralow temperature (< 60C), through an efficient integration of the dissociated skeleton of the MC precursors. Finally, to demonstrate the versatility of the ultralow-Temperature-Annealed and large area ceramic dielectrics, metal-oxide TFTs, carbon nanotube TFTs and integrated circuits were fabricated directly both on ultrathin (thickness < 3 m) polymeric and low thermal budget stretchable substrates. The metal-oxide TFTs and 7-stage ring oscillator circuits showed an average mobility of 5 cm2 V-1 s-1 with a narrow distribution of the performance and good operational stability, and oscillation frequency greater than 1 MHz with corresponding propagation delay less than 70 ns per stage, respectively. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Ultralow temperature solution processed gate dielectrics using molecular structured precursors and highly energetic photochemical process | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jaekyun | - |
dc.identifier.scopusid | 2-s2.0-85034418002 | - |
dc.identifier.bibliographicCitation | AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, pp.292 - 295 | - |
dc.relation.isPartOf | AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings | - |
dc.citation.title | AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings | - |
dc.citation.startPage | 292 | - |
dc.citation.endPage | 295 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Activated alumina | - |
dc.subject.keywordPlus | Alumina | - |
dc.subject.keywordPlus | Aluminum | - |
dc.subject.keywordPlus | Aluminum compounds | - |
dc.subject.keywordPlus | Budget control | - |
dc.subject.keywordPlus | Carbon | - |
dc.subject.keywordPlus | Carbon nanotubes | - |
dc.subject.keywordPlus | Chemical activation | - |
dc.subject.keywordPlus | Delay circuits | - |
dc.subject.keywordPlus | Dielectric materials | - |
dc.subject.keywordPlus | Display devices | - |
dc.subject.keywordPlus | Field effect transistors | - |
dc.subject.keywordPlus | Flat panel displays | - |
dc.subject.keywordPlus | Gate dielectrics | - |
dc.subject.keywordPlus | Metallic compounds | - |
dc.subject.keywordPlus | Metals | - |
dc.subject.keywordPlus | Oscillators (electronic) | - |
dc.subject.keywordPlus | Oxide films | - |
dc.subject.keywordPlus | Substrates | - |
dc.subject.keywordPlus | Yarn | - |
dc.subject.keywordPlus | Ceramic dielectrics | - |
dc.subject.keywordPlus | Metal oxide dielectrics | - |
dc.subject.keywordPlus | Narrow distribution | - |
dc.subject.keywordPlus | Operational stability | - |
dc.subject.keywordPlus | Oscillation frequency | - |
dc.subject.keywordPlus | Photochemical process | - |
dc.subject.keywordPlus | Ring oscillator circuits | - |
dc.subject.keywordPlus | Ultra low temperatures | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.identifier.url | https://ieeexplore.ieee.org/abstract/document/8006155 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.