Ultralow temperature solution processed gate dielectrics using molecular structured precursors and highly energetic photochemical process
- Authors
- Jo, Jeong-Wan; Kim, Myung-Gil; Park, Joohyung; Heo, Jae Sang; Kang, Jin-Gu; Ban, Seok-Gyu; Kim, Yong-Hoon; Hwang, Seongpil; Kim, Jaekyun; Park, Sung Kyu
- Issue Date
- Jul-2017
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, pp.292 - 295
- Indexed
- SCOPUS
- Journal Title
- AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings
- Start Page
- 292
- End Page
- 295
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11678
- ISSN
- 0000-0000
- Abstract
- We report a new strategy for obtaining an ultralow temperature solution derived metal-oxide dielectric such alumina, by using molecular clusters (MCs) (aluminium-oxo-hydroxy cluster, Al-13) as a precursor and local structure controllable activation process via deep-ultraviolet (DUV)-induced photochemical activation. We show that the combination of Al-13 MC precursor and the spatially controllable photochemical activation enables the formation of highly dense oxide (Al2O3) thin films at an ultralow temperature (< 60C), through an efficient integration of the dissociated skeleton of the MC precursors. Finally, to demonstrate the versatility of the ultralow-Temperature-Annealed and large area ceramic dielectrics, metal-oxide TFTs, carbon nanotube TFTs and integrated circuits were fabricated directly both on ultrathin (thickness < 3 m) polymeric and low thermal budget stretchable substrates. The metal-oxide TFTs and 7-stage ring oscillator circuits showed an average mobility of 5 cm2 V-1 s-1 with a narrow distribution of the performance and good operational stability, and oscillation frequency greater than 1 MHz with corresponding propagation delay less than 70 ns per stage, respectively.
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Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 1. Journal Articles
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