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Simulation of a Recessed Channel Ferroelectric-Gate Field-Effect Transistor with a Dual Ferroelectric Gate Stack for Memory Application
- Authors
- 김영현
- Issue Date
- 15-Feb-2023
- Conference Name
- 한국반도체학술대회
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Related Researcher
- Kim, Young hyun
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)