Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
High-Q Transformer Neutralization Technique for W-Band Dual-Band LNA Using 0.1 μm GaAs pHEMT Technologyopen access
- Authors
- 심태주; Lee, Dongmin; Kim, Wansik; Kim, Kichul; Choi, Jeunwon; 김민수; Kim, Junghyun
- Issue Date
- Nov-2023
- Publisher
- 한국전자파학회
- Keywords
- LNA; Dual-Band; GaAs pHEMT; Transformer-Based Neutralization; W-Band
- Citation
- Journal of Electromagnetic Engineering and Science, v.23, no.6, pp 482 - 489
- Pages
- 8
- Indexed
- SCIE
KCI
- Journal Title
- Journal of Electromagnetic Engineering and Science
- Volume
- 23
- Number
- 6
- Start Page
- 482
- End Page
- 489
- ISSN
- 2671-7255
2671-7263
- Abstract
- In this study, a dual-band low-noise amplifier (LNA) was implemented by applying a transformer-based neutralization technology to the W-band. Incorporating the neutralization technique was difficult owing to performance degradation in the W-band. However, circuit performance was enhanced thanks to the layout optimization of transformer-based neutralization networks, and the improved operation was confirmed in the W-band. The neutralization technique was implemented in four stages with a 0.1-μm gallium arsenide (GaAs) pseudomorphic high-electron-mobility-transistor monolithic microwave integrated circuit LNA. The LNA showed small signal gains of 20.3 dB and 21.7 dB and noise figures of 5.0 dB and 6.4 dB (at 84 GHz and 96 GHz, respectively) while consuming 46 mW from a 1-V supply.
- Files in This Item
- Go to Link
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- KIM, JUNG HYUN
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)