Determining the Turn-On Voltage of GaN-Based Light-Emitting Diodes: From Near-Ultraviolet to Green Spectra
DC Field | Value | Language |
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dc.contributor.author | Islam, Abu Bashar Mohammad Hamidul | - |
dc.contributor.author | Shin, Dong-Soo | - |
dc.contributor.author | Kwak, Joon Seop | - |
dc.contributor.author | Shim, Jong-In | - |
dc.date.accessioned | 2024-01-19T08:00:27Z | - |
dc.date.available | 2024-01-19T08:00:27Z | - |
dc.date.issued | 2023-12 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.issn | 2162-8777 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/117794 | - |
dc.description.abstract | This work investigates the turn-on voltage (V on) estimation methods from experimental data of InGaN-based multiple-quantum-well light-emitting diodes (LEDs) with emission spectra from near-ultraviolet to green wavelengths. Three different methods are examined: fixed current intercept, linear fitting of current-voltage curve, and the minimum ideality factor (n ideal). The voltage at minimum n ideal consistently represents the on-state of LEDs since it describes the carrier recombination processes reflected in light output power (LOP) and the external quantum efficiency (EQE). Beyond the voltage at minimum n ideal, samples' LOPs start to increase abruptly, with the EQEs reaching ˃= 54% of the peak EQE values. For V on determined by other methods, samples'LOPs are already turned on and the EQEs exceed their peak value. Therefore, using the minimum n ideal is a suitable method for determining Von of an LED. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Electrochemical Society, Inc. | - |
dc.title | Determining the Turn-On Voltage of GaN-Based Light-Emitting Diodes: From Near-Ultraviolet to Green Spectra | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1149/2162-8777/ad0fed | - |
dc.identifier.scopusid | 2-s2.0-85180372308 | - |
dc.identifier.wosid | 001116938000001 | - |
dc.identifier.bibliographicCitation | ECS Journal of Solid State Science and Technology, v.12, no.12, pp 1 - 4 | - |
dc.citation.title | ECS Journal of Solid State Science and Technology | - |
dc.citation.volume | 12 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | INTERNAL QUANTUM EFFICIENCY | - |
dc.identifier.url | https://www.scopus.com/record/display.uri?eid=2-s2.0-85180372308&origin=inward&txGid=edcf4ef75e991b3d41a4fd15c88d83f1 | - |
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