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High-speed Light Detection Sensor for Hardware Security in Standard CMOS Technology
- Authors
- Kim, Dana; Hong, Jong-Phil; Lee, Jiwon; Nam, Jae-won
- Issue Date
- Oct-2023
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- Capacitance; Detectors; Hardware security; High-speed optical techniques; junction capacitance; Junctions; light detector; Photodiodes; Security circuit; shallow trench isolation; silicon photodiode; Voltage
- Citation
- IEEE Transactions on Circuits and Systems II: Express Briefs, v.70, no.10, pp 1 - 5
- Pages
- 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Transactions on Circuits and Systems II: Express Briefs
- Volume
- 70
- Number
- 10
- Start Page
- 1
- End Page
- 5
- ISSN
- 1549-7747
1558-3791
- Abstract
- This article presents a triple-times-sensitive light detection sensor. The proposed sensor performs faster initialization starting from a power-up sequence, caused by the additional delay-cell logic. Furthermore, the finger-and well-type photodiodes detect light more quickly than a conventional structure while occupying the same active area of 50 × 50 μmtextsuperscript2. The finger-type structure photodiode demonstrates an external quantum efficiency (EQE) of 76 %, responsivity (R) of 0.336 A/W, specific detectivity (D*) of 5.814 × 1011 Jones, and noise equivalent power (NEP) of 8.599 × 10-17 W with under 550 nm illumination at reverse bias of 1.8 V, which are derived from TCAD simulation results. Both prototype light detection sensor with finger-and well-type photodiodes are implemented in a 180 nm standard CMOS technology (1P6M) and achieved about 3 and 1.3 times faster light detection speed than the conventional structure in optical experiment. IEEE
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