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Highly reliable bipolar resistive switching of tantalum oxide-based memory using Al2O3 diffusion barrier layers
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Seung Ryul | - |
| dc.contributor.author | Kang, Bo Soo | - |
| dc.date.accessioned | 2024-04-12T04:30:25Z | - |
| dc.date.available | 2024-04-12T04:30:25Z | - |
| dc.date.issued | 2024-05 | - |
| dc.identifier.issn | 1567-1739 | - |
| dc.identifier.issn | 1878-1675 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/118714 | - |
| dc.description.abstract | We present a novel bipolar resistive switching memory based on TaOx, featuring a Ru/Al2O3/Ta2O5/TaOx/Al2O3/W structure. Thin Al2O3 layers play a crucial role as diffusion barriers, preventing undesirable interfacial reactions at the top and bottom interfaces. They support the stable formation of the Schottky barrier near the Ru top electrode through redox reactions during operation, resulting in highly reliable bipolar resistive switching. The device exhibits excellent memory performance, including a fast operation speed (∼10 ns), good switching endurance (∼106 cycles), and robust data retention (>104 s at 200 °C). © 2024 | - |
| dc.format.extent | 5 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Elsevier B.V. | - |
| dc.title | Highly reliable bipolar resistive switching of tantalum oxide-based memory using Al2O3 diffusion barrier layers | - |
| dc.type | Article | - |
| dc.publisher.location | 대한민국 | - |
| dc.identifier.doi | 10.1016/j.cap.2024.02.008 | - |
| dc.identifier.scopusid | 2-s2.0-85186329912 | - |
| dc.identifier.wosid | 001223889800001 | - |
| dc.identifier.bibliographicCitation | Current Applied Physics, v.61, pp 75 - 79 | - |
| dc.citation.title | Current Applied Physics | - |
| dc.citation.volume | 61 | - |
| dc.citation.startPage | 75 | - |
| dc.citation.endPage | 79 | - |
| dc.type.docType | Article | - |
| dc.identifier.kciid | ART003084170 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordAuthor | Al<sub>2</sub>O<sub>3</sub> | - |
| dc.subject.keywordAuthor | Diffusion barrier | - |
| dc.subject.keywordAuthor | Resistive switching | - |
| dc.subject.keywordAuthor | RRAM | - |
| dc.subject.keywordAuthor | TaO<sub>x</sub> | - |
| dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1567173924000300?via%3Dihub | - |
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Related Researcher
- Kang, Bo Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)