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Total-Ionizing Dose Damage from X-Ray PCB Inspection Systems
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Pieper, N.J. | - |
| dc.contributor.author | Chun, M. | - |
| dc.contributor.author | Xiong, Y. | - |
| dc.contributor.author | Dattilo, H.M. | - |
| dc.contributor.author | Kronenberg, J. | - |
| dc.contributor.author | Baeg, S. | - |
| dc.contributor.author | Wen, S.-J. | - |
| dc.contributor.author | Fung, R. | - |
| dc.contributor.author | Chan, D. | - |
| dc.contributor.author | Escobar, C. | - |
| dc.contributor.author | Bhuva, B.L. | - |
| dc.date.accessioned | 2024-06-10T08:00:22Z | - |
| dc.date.available | 2024-06-10T08:00:22Z | - |
| dc.date.issued | 2024-04 | - |
| dc.identifier.issn | 1541-7026 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/119260 | - |
| dc.description.abstract | High-energy X-rays are used in PCB inspection systems to ensure electrical connectivity between components. The X-rays used in these systems often have energy ranging from a few keV to 150 keV. Exposure to these X-rays can cause a shift in individual transistor parameters due to total-ionizing dose (TID) effects. This damage is characterized for commercial PCB inspection systems along with mitigation techniques. © 2024 IEEE. | - |
| dc.format.extent | 7 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.title | Total-Ionizing Dose Damage from X-Ray PCB Inspection Systems | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1109/IRPS48228.2024.10529337 | - |
| dc.identifier.scopusid | 2-s2.0-85194103906 | - |
| dc.identifier.wosid | 001229691100019 | - |
| dc.identifier.bibliographicCitation | 2024 IEEE International Reliability Physics Symposium (IRPS), pp 1 - 7 | - |
| dc.citation.title | 2024 IEEE International Reliability Physics Symposium (IRPS) | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 7 | - |
| dc.type.docType | Proceedings Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordAuthor | DRAM | - |
| dc.subject.keywordAuthor | Ring Oscillator | - |
| dc.subject.keywordAuthor | TID | - |
| dc.subject.keywordAuthor | X-rays | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/10529337 | - |
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Related Researcher
- Baeg, Sanghyeon
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)