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Total-Ionizing Dose Damage from X-Ray PCB Inspection Systems
- Authors
- Pieper, N.J.; Chun, M.; Xiong, Y.; Dattilo, H.M.; Kronenberg, J.; Baeg, S.; Wen, S.-J.; Fung, R.; Chan, D.; Escobar, C.; Bhuva, B.L.
- Issue Date
- Apr-2024
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- DRAM; Ring Oscillator; TID; X-rays
- Citation
- 2024 IEEE International Reliability Physics Symposium (IRPS), pp 1 - 7
- Pages
- 7
- Indexed
- SCOPUS
- Journal Title
- 2024 IEEE International Reliability Physics Symposium (IRPS)
- Start Page
- 1
- End Page
- 7
- ISSN
- 1541-7026
- Abstract
- High-energy X-rays are used in PCB inspection systems to ensure electrical connectivity between components. The X-rays used in these systems often have energy ranging from a few keV to 150 keV. Exposure to these X-rays can cause a shift in individual transistor parameters due to total-ionizing dose (TID) effects. This damage is characterized for commercial PCB inspection systems along with mitigation techniques. © 2024 IEEE.
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Related Researcher
- Baeg, Sanghyeon
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)