Native defect clustering-induced carrier localization centers leading to a reduction of performance in Ga0.70In0.30N/GaN quantum wells
DC Field | Value | Language |
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dc.contributor.author | Han, Dong-PyoHan, Dong-Pyo | - |
dc.contributor.author | Kim, Jiwon | - |
dc.contributor.author | Shin, Dong-Soo | - |
dc.contributor.author | Shim, Jong-In | - |
dc.date.accessioned | 2024-06-13T11:04:09Z | - |
dc.date.available | 2024-06-13T11:04:09Z | - |
dc.date.issued | 2023-04 | - |
dc.identifier.issn | 1094-4087 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/119452 | - |
dc.description.abstract | In this study, we aimed to better understand the mechanism for creating carrier localization centers (CLCs) in Ga0.70In0.30N/GaN quantum wells (QWs) and examine their impacts on device performance. Particularly, we focused on the incorporation of native defects into the QWs as a main cause of the mechanism behind the CLC creation. For this purpose, we prepared two GaInN-based LED samples with and without pre-trimethylindium (TMIn) flow-treated QWs. Here, the QWs were subjected to a pre-TMIn flow treatment to control the incorporation of defects/impurities in the QWs. In an effort to investigate how the pre-TMIn flow treatment affects the incorporation of native defects into the QWs, we employed steadystate photo-capacitance and photo-assisted capacitance-voltage measurements, and acquired high-resolution micro-charge-coupled device images. The experimental results showed that CLC creation in the QWs during growth is closely related to the native defects, most likely VN-related defects/complexes, since they have a strong affinity to In atoms and the nature of clustering. Moreover, the CLC creation is fatal to the performance of the yellow-red QWs since they simultaneously increase the non-radiative recombination rate, decrease the radiative recombination rate, and increase operating voltage-unlike blue QWs. | - |
dc.format.extent | 12 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Optical Society of America | - |
dc.title | Native defect clustering-induced carrier localization centers leading to a reduction of performance in Ga0.70In0.30N/GaN quantum wells | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1364/OE.486721 | - |
dc.identifier.scopusid | 2-s2.0-85158163416 | - |
dc.identifier.wosid | 000996287000005 | - |
dc.identifier.bibliographicCitation | Optics Express, v.31, no.10, pp 15779 - 15790 | - |
dc.citation.title | Optics Express | - |
dc.citation.volume | 31 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 15779 | - |
dc.citation.endPage | 15790 | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.subject.keywordPlus | INGAN | - |
dc.identifier.url | https://opg.optica.org/oe/fulltext.cfm?uri=oe-31-10-15779&id=530106 | - |
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