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A Strategy to Facilely Deposit the Multi-layer HfO2/ZrO2 Thin Films with Ferroelectric Properties by Atomic Layer Deposition
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 안지훈 | - |
| dc.date.accessioned | 2024-07-07T06:32:21Z | - |
| dc.date.available | 2024-07-07T06:32:21Z | - |
| dc.date.issued | 2023-10-31 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/119779 | - |
| dc.title | A Strategy to Facilely Deposit the Multi-layer HfO2/ZrO2 Thin Films with Ferroelectric Properties by Atomic Layer Deposition | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 7th International Conference on Advanced Electromaterials | - |
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Related Researcher
- Ahn, Ji Hoon
- ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)