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Confocal Photoluminescence and Electroluminescence of Blue InGaN/GaN Nanorod Light-emitting Diodes with Different Passivation Approaches
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Le, Quang Trung | - |
| dc.contributor.author | Shin, Youngwook | - |
| dc.contributor.author | Bak, Byeong-U | - |
| dc.contributor.author | Hwang, Jun Seok | - |
| dc.contributor.author | Kim, Jaekyun | - |
| dc.date.accessioned | 2024-09-12T05:30:30Z | - |
| dc.date.available | 2024-09-12T05:30:30Z | - |
| dc.date.issued | 2024-07 | - |
| dc.identifier.issn | 0097-966X | - |
| dc.identifier.issn | 2168-0159 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/120498 | - |
| dc.description.abstract | The sidewall passivation is essential to achieve high micro lightemitting diode (LED) efficiency. We investigated different sidewall passivation strategies on InGaN/GaN blue nLED, including Thermal ALD and PEALD Al2O3. The characterization of temperature and laser excitation-dependent photoluminescence (PL) and time-resolved photoluminescence (TRPL) were observed to determine the efficiency. Sidewall passivated-nLED device was fabricated and characterized. The device exhibits extremely high brightness, even at low operation current. © 2024, John Wiley and Sons Inc. All rights reserved. | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | John Wiley and Sons Inc | - |
| dc.title | Confocal Photoluminescence and Electroluminescence of Blue InGaN/GaN Nanorod Light-emitting Diodes with Different Passivation Approaches | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1002/sdtp.17969 | - |
| dc.identifier.scopusid | 2-s2.0-85202641694 | - |
| dc.identifier.bibliographicCitation | Digest of Technical Papers - SID International Symposium, v.55, no.1, pp 1935 - 1938 | - |
| dc.citation.title | Digest of Technical Papers - SID International Symposium | - |
| dc.citation.volume | 55 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 1935 | - |
| dc.citation.endPage | 1938 | - |
| dc.type.docType | Conference paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordAuthor | Dielectrophoresis force | - |
| dc.subject.keywordAuthor | GaN/InGaN | - |
| dc.subject.keywordAuthor | Micro LED | - |
| dc.subject.keywordAuthor | nanorod LED | - |
| dc.subject.keywordAuthor | PL spectra | - |
| dc.subject.keywordAuthor | Sidewall Passivation | - |
| dc.subject.keywordAuthor | TRPL | - |
| dc.identifier.url | https://sid.onlinelibrary.wiley.com/doi/10.1002/sdtp.17969 | - |
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- KIM, Jaekyun
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)