Confocal Photoluminescence and Electroluminescence of Blue InGaN/GaN Nanorod Light-emitting Diodes with Different Passivation Approaches
- Authors
- Le, Quang Trung; Shin, Youngwook; Bak, Byeong-U; Hwang, Jun Seok; Kim, Jaekyun
- Issue Date
- Jul-2024
- Publisher
- John Wiley and Sons Inc
- Keywords
- Dielectrophoresis force; GaN/InGaN; Micro LED; nanorod LED; PL spectra; Sidewall Passivation; TRPL
- Citation
- Digest of Technical Papers - SID International Symposium, v.55, no.1, pp 1935 - 1938
- Pages
- 4
- Indexed
- SCOPUS
- Journal Title
- Digest of Technical Papers - SID International Symposium
- Volume
- 55
- Number
- 1
- Start Page
- 1935
- End Page
- 1938
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/120498
- DOI
- 10.1002/sdtp.17969
- ISSN
- 0097-966X
2168-0159
- Abstract
- The sidewall passivation is essential to achieve high micro lightemitting diode (LED) efficiency. We investigated different sidewall passivation strategies on InGaN/GaN blue nLED, including Thermal ALD and PEALD Al2O3. The characterization of temperature and laser excitation-dependent photoluminescence (PL) and time-resolved photoluminescence (TRPL) were observed to determine the efficiency. Sidewall passivated-nLED device was fabricated and characterized. The device exhibits extremely high brightness, even at low operation current. © 2024, John Wiley and Sons Inc. All rights reserved.
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