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Confocal Photoluminescence and Electroluminescence of Blue InGaN/GaN Nanorod Light-emitting Diodes with Different Passivation Approaches

Authors
Le, Quang TrungShin, YoungwookBak, Byeong-UHwang, Jun SeokKim, Jaekyun
Issue Date
Jul-2024
Publisher
John Wiley and Sons Inc
Keywords
Dielectrophoresis force; GaN/InGaN; Micro LED; nanorod LED; PL spectra; Sidewall Passivation; TRPL
Citation
Digest of Technical Papers - SID International Symposium, v.55, no.1, pp 1935 - 1938
Pages
4
Indexed
SCOPUS
Journal Title
Digest of Technical Papers - SID International Symposium
Volume
55
Number
1
Start Page
1935
End Page
1938
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/120498
DOI
10.1002/sdtp.17969
ISSN
0097-966X
2168-0159
Abstract
The sidewall passivation is essential to achieve high micro lightemitting diode (LED) efficiency. We investigated different sidewall passivation strategies on InGaN/GaN blue nLED, including Thermal ALD and PEALD Al2O3. The characterization of temperature and laser excitation-dependent photoluminescence (PL) and time-resolved photoluminescence (TRPL) were observed to determine the efficiency. Sidewall passivated-nLED device was fabricated and characterized. The device exhibits extremely high brightness, even at low operation current. © 2024, John Wiley and Sons Inc. All rights reserved.
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ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)
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