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Controlled Engineering of Defects and Interfaces in Thermoelectric Materials With Atomic Layer Deposition

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dc.contributor.authorPark, Gwang Min-
dc.contributor.authorLee, Seunghyeok-
dc.contributor.authorPark, Tae Joo-
dc.contributor.authorBaek, Seung-Hyub-
dc.contributor.authorKim, Jin-Sang-
dc.contributor.authorKim, Seong Keun-
dc.date.accessioned2024-12-10T07:30:31Z-
dc.date.available2024-12-10T07:30:31Z-
dc.date.issued2024-10-
dc.identifier.issn2196-7350-
dc.identifier.issn2196-7350-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/121280-
dc.description.abstractEnhancing the performance of thermoelectric materials remains critical for practical applications. Increasing the power factor and reducing the thermal conductivity are key strategies for improving the thermoelectric performance. Doping, incorporating secondary phases, and generating dislocations can be used to introduce defects and grain boundaries to improve the thermoelectric performance. The application of an ultrathin film as a coating on thermoelectric materials via atomic layer deposition (ALD) has recently attracted attention as a novel approach to enhance the performance. The excellent conformality of ALD enables the conformal deposition of ultrathin films on powder to enable the interfacial properties to be meticulously controlled even after sintering. Using ALD to deposit an ultrathin layer on the thermoelectric powder matrix induces various defects through the interactions of the coating material with the thermoelectric matrix, which provide exquisite control over the material properties. This review discusses the phenomena induced by applying ultrathin coatings to thermoelectric materials through ALD, elucidates the underlying mechanisms, and examines the effects on the thermoelectric performance. Based on these insights, innovative pathways for applying ALD to thermoelectric materials are proposed, and robust strategies for enhancing these properties through the precise modulation of diverse defects and interfaces are discussed. © 2024 The Author(s). Advanced Materials Interfaces published by Wiley-VCH GmbH.-
dc.format.extent14-
dc.language영어-
dc.language.isoENG-
dc.publisherJohn Wiley and Sons Inc-
dc.titleControlled Engineering of Defects and Interfaces in Thermoelectric Materials With Atomic Layer Deposition-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1002/admi.202400581-
dc.identifier.scopusid2-s2.0-85207630066-
dc.identifier.wosid001357232700001-
dc.identifier.bibliographicCitationAdvanced Materials Interfaces, v.12, no.3, pp 1 - 14-
dc.citation.titleAdvanced Materials Interfaces-
dc.citation.volume12-
dc.citation.number3-
dc.citation.startPage1-
dc.citation.endPage14-
dc.type.docTypeReview; Early Access-
dc.description.isOpenAccessY-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusOXIDE THIN-FILMS-
dc.subject.keywordPlusULTRALOW THERMAL-CONDUCTIVITY-
dc.subject.keywordPlusCARRIER CONCENTRATION-
dc.subject.keywordPlusBI2TE3-BASED ALLOYS-
dc.subject.keywordPlusGRAIN-BOUNDARIES-
dc.subject.keywordPlusSECONDARY PHASE-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusBISMUTH-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusALD-
dc.subject.keywordAuthoratomic layer deposition-
dc.subject.keywordAuthordefects-
dc.subject.keywordAuthorinterfaces-
dc.subject.keywordAuthorthermoelectric materials-
dc.identifier.urlhttps://onlinelibrary.wiley.com/doi/10.1002/admi.202400581-
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ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)
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