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Active-Layer Characteristics of Eu-Doped GaN-Based Red Light-Emitting Diodes Investigated by Photoexcitation Measurements
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 신동수 | - |
| dc.date.accessioned | 2024-12-28T12:31:07Z | - |
| dc.date.available | 2024-12-28T12:31:07Z | - |
| dc.date.issued | 2024-10-17 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/121454 | - |
| dc.title | Active-Layer Characteristics of Eu-Doped GaN-Based Red Light-Emitting Diodes Investigated by Photoexcitation Measurements | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | The 11th Asia-Pacific Workshop on Widegap Semiconductors | - |
| dc.citation.conferencePlace | Hanwha Resorts Haeundae, Busan, Korea | - |
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Related Researcher
- Shin, Dong Soo
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)