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Differences in Surface Chemical Behavior and Cleaning Mechanism of Si and SiC
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김태곤 | - |
| dc.date.accessioned | 2025-01-04T13:32:06Z | - |
| dc.date.available | 2025-01-04T13:32:06Z | - |
| dc.date.issued | 2024-01-26 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/121640 | - |
| dc.title | Differences in Surface Chemical Behavior and Cleaning Mechanism of Si and SiC | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국반도체학술대회 | - |
| dc.citation.conferencePlace | 경주화백컨벤센터 | - |
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Related Researcher
- KIM, TAE GON
- ERICA 공학대학 (MAJOR IN APPLIED MATERIAL & COMPONENTS)