A 65 nm Temporally Hardened Flip-Flop Circuit
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Li, Y. -Q. | - |
dc.contributor.author | Wang, H. -B. | - |
dc.contributor.author | Liu, Rui | - |
dc.contributor.author | Chen, Li | - |
dc.contributor.author | Nofal, Issam | - |
dc.contributor.author | Chen, Q. -Y. | - |
dc.contributor.author | He, A. -L. | - |
dc.contributor.author | Guo, Gang | - |
dc.contributor.author | Baeg, Sang H. | - |
dc.contributor.author | Wen, Shi-Jie | - |
dc.contributor.author | Wong, Richard | - |
dc.contributor.author | Wu, Qiong | - |
dc.contributor.author | Chen, Mo | - |
dc.date.accessioned | 2021-06-22T15:44:25Z | - |
dc.date.available | 2021-06-22T15:44:25Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2016-12 | - |
dc.identifier.issn | 0018-9499 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/12184 | - |
dc.description.abstract | A guard-gate based flip-flop circuit temporally hardened against single-event effects is presented in this paper. Compared to several existed techniques, the organization of components inside the proposed design allows the improved performance- only one tau (the maximum width of a single-event transient (SET) to tolerate) is added into the setup time. A previously reported low-power delay element is applied, which helps make the proposed design power-efficient. The proposed design was implemented in a 65 nm CMOS bulk technology. Alpha and heavy-ions radiation experiments were performed to characterize its soft-error rates. Experimental results show that the proposed design presents no error with LETs up to 37.3 MeV-cm(2)/mg. Simulation results from the TFIT further validate the experimental results. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | A 65 nm Temporally Hardened Flip-Flop Circuit | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Baeg, Sang H. | - |
dc.identifier.doi | 10.1109/TNS.2016.2608911 | - |
dc.identifier.scopusid | 2-s2.0-85027031848 | - |
dc.identifier.wosid | 000391693100025 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.63, no.6, pp.2934 - 2940 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | - |
dc.citation.title | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | - |
dc.citation.volume | 63 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 2934 | - |
dc.citation.endPage | 2940 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Nuclear Science & Technology | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nuclear Science & Technology | - |
dc.subject.keywordPlus | CMOS TECHNOLOGY | - |
dc.subject.keywordPlus | HEAVY-ION | - |
dc.subject.keywordPlus | GUARD-GATES | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | UPSET | - |
dc.subject.keywordPlus | SENSITIVITY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | MECHANISMS | - |
dc.subject.keywordPlus | SRAMS | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordAuthor | Flip-flop | - |
dc.subject.keywordAuthor | SET | - |
dc.subject.keywordAuthor | SEU | - |
dc.subject.keywordAuthor | temporal hardening | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/7565582 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.