Effect of Interface State Density of the AlGaN Electron Blocking Layer/GaN Barrier Layer in InGaN Blue Light-Emitting Diodes
DC Field | Value | Language |
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dc.contributor.author | Kim, Kyu-Sang | - |
dc.contributor.author | Shim, Jong-In | - |
dc.date.accessioned | 2021-06-22T09:07:21Z | - |
dc.date.available | 2021-06-22T09:07:21Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2020-03 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/1250 | - |
dc.description.abstract | Herein, two kinds of blue InGaN light-emitting diodes (LEDs) were compared in order to understand the effect of the strain originating from two different sapphire substrates. One of the LED types was grown on a patterned sapphire substrate (PSS), and the other was grown on a conventional sapphire substrate (CSS). The internal strains biased on InGaN quantum wells were compared by studying the time-resolved photoluminescence and the electroreflectance. Through analysis of the dynamic capacitance dispersion measurements, the relation between the trap states and trap density of the AlGaN electron blocking layer/GaN barrier interface above the InGaN quantum wells can be understood in great detail. The trapped charges of the CSSs have faster response times than those of the PSSs; this is attributed to the stronger piezo-field, which induces the AlGaN EBL/GaN barrier interface trap states to be effectively located at shallower levels from the conduction band. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | 한국물리학회 | - |
dc.title | Effect of Interface State Density of the AlGaN Electron Blocking Layer/GaN Barrier Layer in InGaN Blue Light-Emitting Diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Shim, Jong-In | - |
dc.identifier.doi | 10.3938/jkps.76.522 | - |
dc.identifier.scopusid | 2-s2.0-85082747392 | - |
dc.identifier.wosid | 000522854700014 | - |
dc.identifier.bibliographicCitation | Journal of the Korean Physical Society, v.76, no.6, pp.522 - 526 | - |
dc.relation.isPartOf | Journal of the Korean Physical Society | - |
dc.citation.title | Journal of the Korean Physical Society | - |
dc.citation.volume | 76 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 522 | - |
dc.citation.endPage | 526 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002574337 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | FIELD | - |
dc.subject.keywordAuthor | InGaN quantum wells | - |
dc.subject.keywordAuthor | Patterned sapphire substrate | - |
dc.subject.keywordAuthor | Strain | - |
dc.identifier.url | https://link.springer.com/article/10.3938/jkps.76.522 | - |
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