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A Broadband Doherty-Like Load-Modulated Balanced Amplifier With an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset Applications

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dc.contributor.authorYoon, Byeongcheol-
dc.contributor.authorBae, Sooji-
dc.contributor.authorLee, Seungju-
dc.contributor.authorHwang, Sungwoon-
dc.contributor.authorJeon, Jooyoung-
dc.contributor.authorKim, Junghyun-
dc.date.accessioned2025-05-16T08:00:32Z-
dc.date.available2025-05-16T08:00:32Z-
dc.date.issued2025-06-
dc.identifier.issn2771-957X-
dc.identifier.issn2771-9588-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/125245-
dc.description.abstractThis letter presents a design methodology for implementing broadband load-modulated balanced amplifier (LMBA) for handset applications. It is evaluated which architecture, Doherty-like LMBA (DL-LMBA) or pseudo-Doherty LMBA (PD-LMBA), is more suitable for InGaP/GaAs HBT power amplifier (PA). The impedance transformation ratio (ITR) is optimized through an analysis of correlation between the coupler impedance (Z(0)) and matching network (MN). A prototype LMBA attains measured saturation power (P-SAT), collector efficiency (CE), and 6-dB output power back-off (OBO) CE of over 33.2 dBm, 45.2%, and 42.0%, respectively, in the range of 3.2-5.0 GHz. The LMBA is also evaluated by 5G NR FR1 100-MHz QPSK CP-OFDM with 9.5-dB peak-to-average power ratio (PAPR), achieving 26.6-dBm average output power (P-avg) with 37.7% average CE (CEavg) at an adjacent channel leakage ratio (ACLR) of -33 dBc.-
dc.format.extent4-
dc.language영어-
dc.language.isoENG-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleA Broadband Doherty-Like Load-Modulated Balanced Amplifier With an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset Applications-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/LMWT.2025.3560289-
dc.identifier.scopusid2-s2.0-105004068033-
dc.identifier.wosid001480600700001-
dc.identifier.bibliographicCitationIEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, v.35, no.6, pp 848 - 851-
dc.citation.titleIEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS-
dc.citation.volume35-
dc.citation.number6-
dc.citation.startPage848-
dc.citation.endPage851-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusPOWER-AMPLIFIER-
dc.subject.keywordPlusBANDWIDTH-
dc.subject.keywordAuthorCouplers-
dc.subject.keywordAuthorImpedance-
dc.subject.keywordAuthorBandwidth-
dc.subject.keywordAuthorBroadband amplifiers-
dc.subject.keywordAuthorTelephone sets-
dc.subject.keywordAuthor5G mobile communication-
dc.subject.keywordAuthorPower amplifiers-
dc.subject.keywordAuthorPower generation-
dc.subject.keywordAuthorWireless communication-
dc.subject.keywordAuthorSemiconductor device measurement-
dc.subject.keywordAuthorBroadband-
dc.subject.keywordAuthorfifth generation (5G)-
dc.subject.keywordAuthorimpedance transformation ratio (ITR)-
dc.subject.keywordAuthorload modulation (LM)-
dc.subject.keywordAuthorpower amplifier (PA)-
dc.identifier.urlhttps://xplorestaging.ieee.org/document/10978863?denied=-
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KIM, JUNG HYUN
ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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