A Broadband Doherty-Like Load-Modulated Balanced Amplifier With an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset Applications
DC Field | Value | Language |
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dc.contributor.author | Yoon, Byeongcheol | - |
dc.contributor.author | Bae, Sooji | - |
dc.contributor.author | Lee, Seungju | - |
dc.contributor.author | Hwang, Sungwoon | - |
dc.contributor.author | Jeon, Jooyoung | - |
dc.contributor.author | Kim, Junghyun | - |
dc.date.accessioned | 2025-05-16T08:00:32Z | - |
dc.date.available | 2025-05-16T08:00:32Z | - |
dc.date.issued | 2025-06 | - |
dc.identifier.issn | 2771-957X | - |
dc.identifier.issn | 2771-9588 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/125245 | - |
dc.description.abstract | This letter presents a design methodology for implementing broadband load-modulated balanced amplifier (LMBA) for handset applications. It is evaluated which architecture, Doherty-like LMBA (DL-LMBA) or pseudo-Doherty LMBA (PD-LMBA), is more suitable for InGaP/GaAs HBT power amplifier (PA). The impedance transformation ratio (ITR) is optimized through an analysis of correlation between the coupler impedance (Z(0)) and matching network (MN). A prototype LMBA attains measured saturation power (P-SAT), collector efficiency (CE), and 6-dB output power back-off (OBO) CE of over 33.2 dBm, 45.2%, and 42.0%, respectively, in the range of 3.2-5.0 GHz. The LMBA is also evaluated by 5G NR FR1 100-MHz QPSK CP-OFDM with 9.5-dB peak-to-average power ratio (PAPR), achieving 26.6-dBm average output power (P-avg) with 37.7% average CE (CEavg) at an adjacent channel leakage ratio (ACLR) of -33 dBc. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | A Broadband Doherty-Like Load-Modulated Balanced Amplifier With an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset Applications | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/LMWT.2025.3560289 | - |
dc.identifier.scopusid | 2-s2.0-105004068033 | - |
dc.identifier.wosid | 001480600700001 | - |
dc.identifier.bibliographicCitation | IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, v.35, no.6, pp 848 - 851 | - |
dc.citation.title | IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | - |
dc.citation.volume | 35 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 848 | - |
dc.citation.endPage | 851 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | POWER-AMPLIFIER | - |
dc.subject.keywordPlus | BANDWIDTH | - |
dc.subject.keywordAuthor | Couplers | - |
dc.subject.keywordAuthor | Impedance | - |
dc.subject.keywordAuthor | Bandwidth | - |
dc.subject.keywordAuthor | Broadband amplifiers | - |
dc.subject.keywordAuthor | Telephone sets | - |
dc.subject.keywordAuthor | 5G mobile communication | - |
dc.subject.keywordAuthor | Power amplifiers | - |
dc.subject.keywordAuthor | Power generation | - |
dc.subject.keywordAuthor | Wireless communication | - |
dc.subject.keywordAuthor | Semiconductor device measurement | - |
dc.subject.keywordAuthor | Broadband | - |
dc.subject.keywordAuthor | fifth generation (5G) | - |
dc.subject.keywordAuthor | impedance transformation ratio (ITR) | - |
dc.subject.keywordAuthor | load modulation (LM) | - |
dc.subject.keywordAuthor | power amplifier (PA) | - |
dc.identifier.url | https://xplorestaging.ieee.org/document/10978863?denied= | - |
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