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A Broadband Doherty-like Load-Modulated Balanced Amplifier with an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset applications
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김정현 | - |
| dc.date.accessioned | 2025-07-05T17:01:52Z | - |
| dc.date.available | 2025-07-05T17:01:52Z | - |
| dc.date.issued | 2025-06-18 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/125819 | - |
| dc.title | A Broadband Doherty-like Load-Modulated Balanced Amplifier with an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset applications | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2025 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM | - |
| dc.citation.conferencePlace | CONVENTION CENTER, San Francisco, CA | - |
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- KIM, JUNG HYUN
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)