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Ultrathin Metal Films with Low Resistivity via Atomic Layer Deposition: Process Pressure Effect on Initial Growth Behavior of Ru Films
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 안지훈 | - |
| dc.date.accessioned | 2025-07-06T07:00:35Z | - |
| dc.date.available | 2025-07-06T07:00:35Z | - |
| dc.date.issued | 2024-11-14 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/125916 | - |
| dc.title | Ultrathin Metal Films with Low Resistivity via Atomic Layer Deposition: Process Pressure Effect on Initial Growth Behavior of Ru Films | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | Korean International Semiconductor Conference on Manufacturing Technology 2024 | - |
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Related Researcher
- Ahn, Ji Hoon
- ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)