Simulation Study of a Monolithic III-V/Si V-Groove Carrier Depletion Optical Phase Shifter
- Authors
- Kim, Sanghyeon; 김영현; Ban, Yoojin; Marianna Pantouvaki; Joris Van Campenhout
- Issue Date
- Feb-2020
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE JOURNAL OF QUANTUM ELECTRONICS, v.56, no.2
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE JOURNAL OF QUANTUM ELECTRONICS
- Volume
- 56
- Number
- 2
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/1287
- DOI
- 10.1109/JQE.2020.2971764
- ISSN
- 0018-9197
- Abstract
- In this paper, we propose a new carrier depletiontype hybrid III-V/Si optical phase shifter using a n-III-V/p-Si hetero-junction, which can be fabricated with direct epitaxial growth of III-V semiconductors on Si. We numerically analyzed the performance of the III-V/Si hybrid optical phase shifter by comparing the performance in reverse bias operation with that of pure Si or III-V p-n optical phase shifters. The hybrid III-V/Si optical phase shifter showed improved modulation efficiency and lower optical loss compared to pure Si and III-V p-n optical phase shifters, owing to the large electron-induced refractive index change of III-V compound semiconductors, while avoiding the large hole-induced optical loss of III-V compound semiconductor. The simulation study suggests the feasibility of a very low voltage-length product (V π L) of 0.07 V · cm, a low insertion loss (α) of 16 dB/cm, and a very low α V π L product close to 1 V · dB at 1.31 μ m, which is 10x lower than for Si p-n optical phase shifters.
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