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Low-frequency noise characteristics of InGaN-based light-emitting diodes under photoexcitation

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dc.contributor.author신동수-
dc.date.accessioned2021-06-22T16:09:21Z-
dc.date.available2021-06-22T16:09:21Z-
dc.date.issued2016-02-24-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/12896-
dc.titleLow-frequency noise characteristics of InGaN-based light-emitting diodes under photoexcitation-
dc.typeConference-
dc.citation.conferenceName제23회 한국반도체학술대회-
dc.citation.conferencePlace강원도 하이원리조트-
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 2. Conference Papers

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