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Interrelations between the forward voltage and the internal quantum efficiency of InGaN-based light-emiting diodes

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dc.contributor.author심종인-
dc.date.accessioned2021-06-22T16:09:51Z-
dc.date.available2021-06-22T16:09:51Z-
dc.date.issued2016-02-18-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/12925-
dc.titleInterrelations between the forward voltage and the internal quantum efficiency of InGaN-based light-emiting diodes-
dc.typeConference-
dc.citation.conferenceName2016 Photnics West-
dc.citation.conferencePlaceSan Francisco, California, USA-
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 2. Conference Papers

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ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)
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