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열처리 후공정이 HAZO-채널 박막 트랜지스터의 특성에 미치는 영향
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이상혁 | - |
| dc.contributor.author | 전현식 | - |
| dc.contributor.author | 박주희 | - |
| dc.contributor.author | 김원 | - |
| dc.contributor.author | 박진석 | - |
| dc.date.accessioned | 2021-06-22T16:24:56Z | - |
| dc.date.available | 2021-06-22T16:24:56Z | - |
| dc.date.issued | 2016-07 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/13189 | - |
| dc.description.abstract | Oxide thin film transistors (O-TFTs) were fabricated by using hafnium-doped aluminum-zinc oxide (HAZO) films as the active-channel. The HAZO films were deposited via co-sputtering method. Furnace annealing was carried out on the deposited HAZO films. The effects of the post-treatment on the transmittance and crystalline structure of the HAZO films were analyzed as functions of the post-treatment conditions used. It was observed that the off-current of the HAZO-TFTs drastically decreased after the furnace annealing. The experiment results also showed that furnace annealing would be an effective method for improving the electrical characteristics of HAZO-TFTs. | - |
| dc.format.extent | 2 | - |
| dc.language | 한국어 | - |
| dc.language.iso | KOR | - |
| dc.publisher | 대한전기학회 | - |
| dc.title | 열처리 후공정이 HAZO-채널 박막 트랜지스터의 특성에 미치는 영향 | - |
| dc.title.alternative | Effects of thermal post-treatment on the characteristics of HAZO-channel thin film transistors | - |
| dc.type | Article | - |
| dc.publisher.location | 대한민국 | - |
| dc.identifier.bibliographicCitation | 2016년도 대한전기학회 하계학술대회논문집, pp 1157 - 1158 | - |
| dc.citation.title | 2016년도 대한전기학회 하계학술대회논문집 | - |
| dc.citation.startPage | 1157 | - |
| dc.citation.endPage | 1158 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | other | - |
| dc.identifier.url | https://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE07011763 | - |
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Related Researcher
- PARK, JIN SEOK
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)