Minimization of Recombination Losses in 3D Nanostructured TiO2 Coated with Few Layered g-C3N4 for Extended Photo-response
- Authors
- Kang, Suhee; Pawar, Rajendra C.; Park, Tae Joon; Kim, Jin Geum; Ahn, Sung-Hoon; Lee, Sunyong Caroline
- Issue Date
- Jul-2016
- Publisher
- 한국세라믹학회
- Keywords
- TiO2; Graphitic-carbon nitride; Photoelectrochemical; Recombination; Film
- Citation
- Journal of The Korean Ceramic Society, v.53, no.4, pp.393 - 399
- Indexed
- SCOPUS
KCI
- Journal Title
- Journal of The Korean Ceramic Society
- Volume
- 53
- Number
- 4
- Start Page
- 393
- End Page
- 399
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/13198
- DOI
- 10.4191/kcers.2016.53.4.393
- ISSN
- 1229-7801
- Abstract
- We have successfully fabricated 3D (3-dimensional) nanostructures of TiO2 coated with a g-C3N4 layer via hydrothermal and sintering methods to enhance photoelectrochemical (PEC) performance. Due to the coupling of TiO2 and g-C3N4, the nanostructures exhibited good performance as the higher conduction band of g-C3N4, which can be combined with TiO2. To fabricate 3D nanostructures of g-C3N4/TiO2, TiO2 was first grown as a double layer structure on FTO (Fluorine-doped tin oxide) substrate at 150 degrees C for 3 h. After this, the g-C3N4 layer was coated on the TiO2 film at 520 degrees C for 4 h. As-prepared samples were varied according to loading of melamine powder, with values of loading of 0.25 g, 0.5 g, 0.75 g, and 1 g. From SEM and TEM analysis, it was possible to clearly observe the 3D sample morphologies. From the PEC measurement, 0.5 g of g-C3N4/TiO2 film was found to exhibit the highest current density of 0.12 mA/cm(2), along with a long-term stability of 5 h. Compared to the pristine TiO2, and to the 0.25 g, 0.75 g, and 1 g g-C3N4/TiO2 films, the 0.5 g of g-C3N4/TiO2 sample was coated with a thin g-C3N4 layer that caused separation of the electrons and the holes; this led to a decreasing recombination. This unique structure can be used in photoelectrochemical applications.
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