Anisotropic shadow effects with various pattern directions in an anamorphic high numerical aperture system
- Authors
- Kim, In-Seon; Kim, Guk-Jin; Yeung, Michael; Barouch, Eytan; Kim, Seong-Wook; Oh, Hye-Keun
- Issue Date
- Aug-2016
- Publisher
- SPIE - International Society for Optical Engineering
- Keywords
- extreme ultraviolet lithography; anamorphic numerical aperture; shadow effects
- Citation
- Journal of Micro/ Nanolithography, MEMS, and MOEMS, v.15, no.3, pp.33504 - 33504
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Micro/ Nanolithography, MEMS, and MOEMS
- Volume
- 15
- Number
- 3
- Start Page
- 33504
- End Page
- 33504
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/13227
- DOI
- 10.1117/1.JMM.15.3.033504
- ISSN
- 1932-5150
- Abstract
- A high numerical aperture (NA) system with an NA larger than 0.5 is required to make patterns of 1X nm and below, even though extreme ultraviolet lithography uses a 13.5-nm wavelength source. To avoid the reflective efficiency loss and to avoid an increase in the chief ray angle of incident light, use of an anamorphic high-NA system is suggested. The suggested anamorphic NA system has nonisotropic magnification, x-magnification of 4x and y-magnification of 8x, and the mask NA shape is an ellipse due to the nonisotropic magnification distribution. Anamorphic NA systems have a nonconventional shadow effect due to nonisotropic incident angle distribution and magnification. These nonisotropic characteristics lead to the reduction of asymmetric shadow distribution and a reduction of horizontal-vertical bias. As a result, anamorphic NA systems can achieve balanced patterning results regardless of pattern direction and incident direction. (C) 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
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Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF APPLIED PHYSICS > 1. Journal Articles
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > ERICA 수리데이터사이언스학과 > 1. Journal Articles
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