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Insulating polymer nanocomposites with high-thermal-conduction routes via linear densely packed boron nitride nanosheets

Authors
Cho, Hong-BaekNakayama, TadachikaSuematsu, HisayukiSuzuki, TsuneoJiang, WeihuaNiihara, KoichiSong, EunpilEom, Nu Si A.Kim, SeilChoa, Yong-Ho
Issue Date
Jun-2016
Publisher
Pergamon Press Ltd.
Keywords
Nanocomposites; Polymer-matrix composites (PMCs); Electrical properties; Thermal properties; Anisotropy
Citation
Composites Science and Technology, v.129, pp.205 - 213
Indexed
SCIE
SCOPUS
Journal Title
Composites Science and Technology
Volume
129
Start Page
205
End Page
213
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/13566
DOI
10.1016/j.compscitech.2016.04.033
ISSN
0266-3538
Abstract
Electrically insulating polymeric nanocomposites with high thermal conductivity have great potential for use as thermal-management materials in increasingly high-power-density electronics and optoelectronics. Conventional composite materials require a large amount, over 70 vol%, of electrically conducting fillers such as carbon allotropes to attain thermal conductivities of 1-5 W/mK, [Balandin, 2011] [1] which restricts the utility of these materials to applications that require both electrical and thermal conductivities. Here, we introduce a strategy to achieve the strongest enhancement of thermal conductivity to date at a low level of filler loading (<= 15 vol%) in insulating polymer nanocomposites with hexagonal boron nitride (BN) nanosheets. The combination of electric-field switching and the application of fillers with various aspect ratios enables the rearrangement of the BN nanofillers into linear densely packed BN structures (LDPBNs). Flexible nanocomposite films with LDPBNs exhibit electrical resistivity greater than 1.50 x 10(-6) M Omega cm and a thermal conductivity of 1.56 W/mK, a dramatic enhancement over that of pristine polysiloxane with the same BN loading (0.4 W/mK). Our strategy of electric-field-induced BN nanosheet assembly offers insight into the possibility of solving thermal-management problems using ideal thermal interface materials, thus enabling improved next-generation integrated circuits and nanoelectronics. (C) 2016 Elsevier Ltd. All rights reserved.
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CHOA, YONG HO
ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)
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