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Reduced distributions of the set current and the voltage of unipolar resistance switching in a current-biased set process
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Na, Sang-Chul | - |
| dc.contributor.author | Chun, Min Chul | - |
| dc.contributor.author | Jang, Gyuyeon | - |
| dc.contributor.author | Shin, Hyejin | - |
| dc.contributor.author | Kwon, Young-Sun | - |
| dc.contributor.author | Kang, Bo Soo | - |
| dc.contributor.author | Lee, Keundong | - |
| dc.contributor.author | Yoon, Chansoo | - |
| dc.contributor.author | Park, Bae Ho | - |
| dc.date.accessioned | 2021-06-22T16:43:13Z | - |
| dc.date.available | 2021-06-22T16:43:13Z | - |
| dc.date.created | 2021-01-21 | - |
| dc.date.issued | 2016-06 | - |
| dc.identifier.issn | 0374-4884 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/13624 | - |
| dc.description.abstract | The set process in a unipolar resistance switching Pt/NiO/Pt thin film was conducted in two different ways: the current-biased set process (current sweep mode) and the voltage-biased set process (voltage sweep mode). In the current-biased set process, a compliance current setting was not necessary for continuing stable resistance switching. The resistance of the low resistance state, the reset and the set switching parameters were compared in both modes of the set processes. The distributions of the set parameters were found to be effectively reduced in the current-biased set process. These intriguing properties can be attributed to the prevention of an overshoot current during the set transition. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | KOREAN PHYSICAL SOC | - |
| dc.title | Reduced distributions of the set current and the voltage of unipolar resistance switching in a current-biased set process | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kang, Bo Soo | - |
| dc.identifier.doi | 10.3938/jkps.68.1467 | - |
| dc.identifier.scopusid | 2-s2.0-84977084232 | - |
| dc.identifier.wosid | 000378943400017 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.68, no.12, pp.1467 - 1471 | - |
| dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
| dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
| dc.citation.volume | 68 | - |
| dc.citation.number | 12 | - |
| dc.citation.startPage | 1467 | - |
| dc.citation.endPage | 1471 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.identifier.kciid | ART002120945 | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
| dc.subject.keywordPlus | RESISTIVE MEMORY | - |
| dc.subject.keywordPlus | HIGH-DENSITY | - |
| dc.subject.keywordPlus | FILMS | - |
| dc.subject.keywordPlus | LAYER | - |
| dc.subject.keywordAuthor | Unipolar resistance switching | - |
| dc.subject.keywordAuthor | Current-biased set process | - |
| dc.subject.keywordAuthor | NiO thin film | - |
| dc.identifier.url | https://link.springer.com/article/10.3938/jkps.68.1467 | - |
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Related Researcher
- Kang, Bo Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)