Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors
- Authors
- Heo, Jae Sang; Jo, Jeong-Wan; Kang, Jingu; Jeong, Chan-Yong; Jeong, Hu Young; Kim, Sung Kyu; Kim, Kwanpyo; Kwon, Hyuck-In; Kim, Jaekyun; Kim, Yong-Hoon; Kim, Myung-Gil; Park, Sung Kyu
- Issue Date
- Apr-2016
- Publisher
- American Chemical Society
- Keywords
- solution-processed metal oxides; water treatment; DUV irradiation; low temperature; thin-film transistors
- Citation
- ACS Applied Materials and Interfaces, v.8, no.16, pp.10403 - 10412
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS Applied Materials and Interfaces
- Volume
- 8
- Number
- 16
- Start Page
- 10403
- End Page
- 10412
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/14048
- DOI
- 10.1021/acsami.5b12819
- ISSN
- 1944-8244
- Abstract
- The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal oxygen metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal oxygen metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 degrees C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 X 10(9), subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm(2) s(-1), and a bias stability of Delta V-TH < 2.5 V), which show more than a 30% improvement over the simple DUV-treated a-IGZO TFTs.
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Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 1. Journal Articles
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