Contact Resistance and Leakage Current of GaN Devices with Annealed Ti/Al/Mo/Au Ohmic Contacts
DC Field | Value | Language |
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dc.contributor.author | Ha, Min-Woo | - |
dc.contributor.author | Choi, Kangmin | - |
dc.contributor.author | Jo, Yoo Jin | - |
dc.contributor.author | Jin, Hyun Soo | - |
dc.contributor.author | Park, Tae Joo | - |
dc.date.accessioned | 2021-06-22T17:03:45Z | - |
dc.date.available | 2021-06-22T17:03:45Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2016-04 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/14128 | - |
dc.description.abstract | In recent years, the on-resistance, power loss and cell density of Si power devices have not exhibited significant improvements, and performance is approaching the material limits. GaN is considered an attractive material for future high-power applications because of the wide band-gap, large breakdown field, high electron mobility, high switching speed and low on-resistance. Here we report on the Ohmic contact resistance and reverse-bias characteristics of AlGaN/GaN Schottky barrier diodes with and without annealing. Annealing in oxygen at 500 degrees C resulted in an increase in the breakdown voltage from 641 to 1,172 V for devices with an anode-cathode separation of 20 mu m. However, these annealing conditions also resulted in an increase in the contact resistance of 0.183 Omega-mm, which is attributed to oxidation of the metal contacts. Auger electron spectroscopy revealed diffusion of oxygen and Au into the AlGaN and GaN layers following annealing. The improved reverse-bias characteristics following annealing in oxygen are attributed to passivation of dangling bonds and plasma damage due to interactions between oxygen and GaN/AlGaN. Thermal annealing is therefore useful during the fabrication of high-voltage GaN devices, but the effects on the Ohmic contact resistance should be considered. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | 대한전자공학회 | - |
dc.title | Contact Resistance and Leakage Current of GaN Devices with Annealed Ti/Al/Mo/Au Ohmic Contacts | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Tae Joo | - |
dc.identifier.doi | 10.5573/JSTS.2016.16.2.179 | - |
dc.identifier.scopusid | 2-s2.0-84964800932 | - |
dc.identifier.wosid | 000375763900007 | - |
dc.identifier.bibliographicCitation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.2, pp.179 - 184 | - |
dc.relation.isPartOf | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.title | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.volume | 16 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 179 | - |
dc.citation.endPage | 184 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | AlGaN | - |
dc.subject.keywordAuthor | Schottky barrier diode | - |
dc.subject.keywordAuthor | breakdown voltage | - |
dc.subject.keywordAuthor | annealing | - |
dc.identifier.url | https://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE06663213&language=ko_KR | - |
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